A low noise amplifier including an amplifier kernel circuit and a DC bias unit is provided. A central core is in parallel with both side surfaces of the housing. An extracting portion 43 extracts code contained in a range specified by each insertion marker in source code. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.