First information representing a plurality of snapshot acquisition time points of the data storage device, journal management data which are second information including the time point at which data are written to the data storage device and the size of the journal for writing the data, and third information representing a plurality of recovery points are acquired. It is a method for producing a high melting point type tris–isocyanurate obtained by mixing two enantiomers of optically active -type tris–isocyanurate. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt. VCO output may be taken from the primary terminals or from the resonator terminals. A second anneal is then performed at a somewhat lower temperature than the GMR anneal. According to the invention, the single deposited layer or at least one of the layers is provided with a TiCN phase, TiOCN phase, TiOC phase, or TiC phase and an additional phase consisting of ZrO2 andor HfO2.