Methods and apparatus for varying one or more internally generated voltages of a memory device based on the temperature of the memory device are provided. The method may include mounting a lower stack including a plurality of lower semiconductor chips on a substrate and mounting an upper stack including a plurality of upper semiconductor chips on the lower stack. In another embodiment, the first long board is connected to a short board, and both the long board and short board are connected to a pick-up truck having an extended cab, with two full doors and two half-doors.