A memory system includes nonvolatile physical memory, such as flash memory, that exhibits a wear mechanism asymmetrically associated with write operations. A, M, W, R1, R2, R6, R7, R8 have meanings given in the description. A ruthenium or a conductive ruthenium oxide gate may be formed on the lanthanide oxide dielectric layer. The method can further include receiving at the mobile radio an over the air programming instruction to suspend a specific service and alerting the mobile radio. A Packet Control Unit is provided and adapted to communicate directly with LMUs that are GPRS capable and indirectly with non-GPRS LMUS through the BSS.