Fluorine-doped tin oxide particles having a structure characterized by peaks at at least 123\xb15 cm\u22121, 139\xb15 cm\u22121, and 170\xb15 cm\u22121 in Raman spectroscopy. While a plurality of semiconductor modules 1 are arranged in such a manner that main surface directions of these semiconductor modules 1 are positioned in parallel to each other in a interval along a thickness direction thereof. A titanium layer is deposited on the surface of the silicon substrate, and a rapid thermal annealing of the titanium-coated silicon substrate is performed to form low resistivity titanium silicide.