A 3D variable resistance memory device having a junction FET and a driving method thereof are provided. There is a second circuitry configured to turn-off the semiconductor device by imposing a current on the gate of the semiconductor device so as to reverse bias the parasitic diode of the semiconductor device wherein the first circuitry and the second circuitry are coupled to the semiconductor device respectively through a first switch and a second switch. A reciprocating slider is seated within a bushing.