It is intended to easily dispense a minute amount of nonvolatile liquid. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. Since the thick gate insulating film lies between the n-type buried layer and the resistance element IR, the coupling capacitance produced between the substrate and the resistance element IR is reduced. In another approach, a comb drive combines with a pair of planar electrodes to produce rotation of a central body relative to a substrate.