A power LDMOS device including a substrate, source and drain regions, gates and trench insulating structures is provided. A copper brazing ring is disposed on the land. The top dielectric layer is etched to form a semiconductor contact while etching at least a portion the hard mask layer thickness over a gate contact area exposed by the second opening. Thereafter, the digital images are available to authorized user having access to the Internet. The locking head has a central post terminating at opposing ends with radially extending, axially aligned discs sized for locking engagement with the apertures. It is provided that a conveying unit comprises a run of an endless conveyor belt or link belt or plate belt, which conveys the container closures, which run is guided along a permanently magnetic or electromagnetic conveyor track configured as a magnetic bar, lying on this track at least in sections, or at a slight distance from it, and conveys the container closures out of the transfer station.