A copolyester composition includes: an aliphatic-aromatic copolyester; a coupling agent including a compound having an epoxy functional group; and a cocatalyst including a carboxylate of manganese and a carboxylate of zinc, wherein a weight ratio of the carboxylate of manganese to the carboxylate of zinc ranges from 1:3 to 3:1, and the cocatalyst is present in an amount ranging from 0. Computation is performed for one or more iterations of computer executable code by a main thread. The supporting structure is disposed on the anode plate and has a top plate portion overlapping the semiconductor device. The semiconductor structure further includes a stressor region over the MOS device; and a stressor-free region inside the stressor region and outside the region over the active region.