Systems, devices, memory controllers, and methods for initializing memory are described. The deep layer is formed into a lattice pattern. Two depressions are defined in the bridge. The plurality of first regions are separated by a plurality of second regions wherein the light emitting layer and p-type region remain in the device. As a result, the superior switching characteristics of III-nitride devices may be leveraged while retaining the functionality and the monolithic structure of the inherent body diode in traditional silicon FETs.