A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. The mantle is made of a thermoplastic resin composition. Second, a dielectric layer is formed over the semiconductor structure, and a via which exposes a part of the semiconductor structure is formed in the dielectric layer by the use of conventional lithographic and etching processes and an electroplated metal layer is formed over the dielectric layer; meanwhile, the via is filled with the electroplated metal layer. As target molecules accumulate on a sensing film affixed to at least a portion of the bridge, stress is produced in the bridge inducing a frequency change measured by an acoustic wave device.