A process for preparing a material in which a gas mixture is subjected to a a temperature of at least 1,000 degrees Celsius while its pressure increased to at least 1,000 Torr. The ink receptive layer comprises certain urethane-containing polymers and blends. The photovoltaic current can have a sufficient current density to be destructive to the metal connections to a well if the area of these metal connections to the well is small relative to the length of the border. The elevated plug ends can then be used to bond another wafer by bonding to pads on the front side of that wafer.