A phase change memory device includes a phase change resistor and first and second electrodes. Subsequently, the reinforced fiber base material fixed to the forming die is covered by a bag film, a forming space that is formed between the forming die and the bag film is decompressed, and a matrix resin is allowed to flow inside the decompressed forming space. The nitrogen-containing metallic powder is produced through the process in which while a metallic compound is reduced with a reducing agent, a nitrogen-containing gas is introduced into a reaction system to thereby form metal, and nitrogen is simultaneously incorporated into metal.