An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. In one embodiment, the invention provides a high voltage transfer circuit of a semiconductor memory device comprising a high voltage switch comprising a high voltage transistor comprising a first terminal connected to a boosted voltage via a first depletion-type transistor and comprising a second terminal connected to an output node via a second depletion-type transistor. A perfluorinated paraxylylene coating formed from the perfluorinated paracyclophane dimer is also disclosed. The sub tank houses an ink absorber having a lot of cavities for holding the ink, and an average distance between cavities is 0. 0 meqg are used as cationic polymers of the microparticle system.