A semiconductor memory device includes a plurality of N and P channel MOS transistors. When the flow guide device is communicated, the brake air valve is not compressed by the high pressure air so that the air grid unit is opened for allowing the flowing of the high pressure air; and vice versa. A pharmaceutical composition containing such a gene is effective in tumor suppression. The control section controls the stencil making process, the stencil disposing process, and the stencil printing process for the printing information. In some embodiments, only one wet anneal, one etch back, and one high density plasma chemical vapor deposition step may be used to fill both sets of trenches. In an embodiment, a mirror substrate is affixed to a member partially released from a first substrate and a through hole formed in the second substrate is accessed to complete release of the member.