A vapor transport growth process for bulk growth of high quality gallium nitride for semiconductor applications is disclosed. The method includes identifying at least one component of the centrally-controlled power distribution system, obtaining at least one of reliability data and reparability data for each at least one component of the centrally-controlled power distribution system, and constructing a reliability block diagram for each functional category. A partial trip is detected in the power distribution network, and then a threshold current is automatically adjusted from a first level to a second level for the neutralground line. Additionally, at least one seal member is received within the seal cavity and adapted to contact the process tube.