A terminal for generating an electromagnetic field adapted to cooperating with at least one transponder when the latter enters its field and including an oscillating circuit adapted to receiving a high-frequency A. The amplifier integrated circuit element has advantages of allowing an appropriate gain to be set by adjusting a circuit constant, and of producing a higher gain than the J-FET; but also has a problem of having a complicated circuit configuration and requiring high costs. The method further includes forming a plurality of cavities in the PMOS region of the substrate, performing at least one epitaxial deposition process to form a plurality of in-situ doped semiconductor layers that are positioned in or above each of said cavities, and forming a masking layer that exposes the NMOS region and covers the PMOS region. Means for moving the dross from one part of the solder reservoir to another, such as a pump, can be included.