1459922083-79aaf97b-2b06-4cee-ab67-85f55bcb3436

An improved method, system, and article of manufacture for reducing via failures is described. A plurality of bit lines is located across the word lines and a plurality of memory cells is located at intersections between the word lines and the bit lines. Functionality of the module can be exposed through a communication interface in the case. Thus, a booting time taken to turn on and use an embedded system significantly increases. R7 is preferably a linear alkyl substituted with one or more groups \u2014w, wherein each Ar6 independently represents an optionally substituted aryl or heteroaryl group, and w is at least 1, for example 1, 2 or 3. The diaphragm elements have a transmission factor for x-ray radiation that is different than zero.