Manufacturing of semiconductor device includes forming, at substrate main surface, PMOS and NMOS regions separated by PN film. At least one zero-Ohm resistor is provided with a first end thereof electrically connected to a device under test of the test target and a second end thereof connected to a test port. In one embodiment a multiplicative error correction is performed on the plurality of events, the first processor element reconstructing the corrected plurality of events; and the second volumetric data error correction comprises an additive error correction. The disclosed prostheses also have controllable opening characteristics and can be crimped to small diameters. A structure of a video data storage portion of the control circuit is that provided with a video data storage portion for storing video data of an n-th frame, a video data storage portion for storing video data of an th frame, and a video data storage portion for sharing video data of the n-th frame and the th frame among received video data.