A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The method begins by receiving a first portion of the file for writing to the compact disc media. Such novel aspects include an elevated blocking surface that directly faces the inlet of a pressurized diluent in order to create turbulence for the mixing, and novel constructions of a depressurizing section together with a funnel-shaped passageway that reduces splashing.