An improved NAND Flash memory and word line selection method has been described, that takes advantage of the asymmetric nature of the word line to word line capacitive coupling to reduce word line selection delay by driving the adjacent word lines to a higher initial voltage and then reducing it to the final target voltage. A motion not intended by a user can be restrained from being generated due to a force acting from the upper limb links provided in the upper limbs. The vias are formed during the flash annealing of the post after the dielectric is deposited, but before the second conductive layer is deposited. The initial voltage adjusting circuit adjusts and applies an initial voltage to the charging capacitor. The hollow hanger member portion protrudes outwardly from the outer wall of the U-shaped member portion and has a generally downwardly facing wall with an aperture extending therethrough.