Affords a semiconductor light-emitting device in which a decrease in external quantum efficiency has been minimized even at high current densities. An image portion formed in the foveal zone of the wearer’s retina is thus sharp, at the same time as another image portion is also sharp, which is formed on the retina away from the foveal zone, by light rays that are oblique to the line of sight of the wearer. In one embodiment, a rotary table is provided for testing, the table having multiple positions for performing different test procedures and for separating rejected tokens according to the particular test failed. In addition, a second SiO2 layer disposed so as to cover the electrode and the first SiO2 layer and a silicon nitride compound layer disposed on the second SiO2 layer are further provided. The touch sensor comprising drive or sense electrodes made of flexible conductive material configured to bend with the substantially flexible substrate.