A flash memory device comprises an array of memory cells arranged in rows and columns and a word line voltage generating circuit adapted to generate a plurality of read voltages at the same time during a multi-bit read operation. The system operates by receiving an encrypted message and an encrypted message key at a destination from a source; the encrypted message having been formed by encrypting the message with a message key; the encrypted message key having been formed by encrypting the message key. A comminuting system rotating about the rotational axis is arranged in the comminuting chamber, which comminuting system has first comminuting tools and second comminuting tools interacting therewith, which form a concentric comminuting zone for charge stock.