A method of forming a semiconductor device is provided that may include providing a semiconductor layer including a raised source and raised drain region that are separated by a recessed channel having a thickness of less than 20 nm, and forming a spacer on a sidewall of the raised source and drain region overlying a portion of the recessed channel. The embodiment further includes driving elements configured to deflect the optical element in said at least one degree of freedom to controllably induce deflection in the optical element and a damping element to reduce magnitude of resonances. Compared with the conventional art, the electrical connector according to the present invention may reduce the stress concentration and elastic fatigue of conductive terminals and increase the normal contact force of conductive terminals. Such statements include arbitrary Boolean expressions defined over, but not restricted to table columns andor other contextual data.