The present invention relates generally to semiconductor memory devices and more particularly to multi-bit flash electrically erasable programmable read only memory devices that employ charge trapping within a floating gate to indicate a 0 or 1 bit state. In this way, the input shaft is in continual connection with the sun gear of the second planetary set and the input shaft is connectable to the sun gear of the first planetary set by means of the first clutch andor by means of the second clutch is also connectable with the spider of the first planetary set. Also included is a pressure sensor mounted in the cryo-chamber for measuring a tip pressure. It is determined whether the portable device is held by a user after the movement based on the movement data provided by the accelerometer. Subsequently, a part of the first material layer on the first side and outside the protection region is removed. The first cavity traverses the first surface of the first dielectric layer to the second side of the first interconnect, where the first cavity overlaps the first interconnect.