A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The electric action and chemical action due to plasma of a first gas generated by means of a plasma generating means and the physical action due to viscous friction force of high speed gas flow generated by means of a planar pad that is brought close to the main surface of a wafer are applied together for cleaning the main surface of the wafer. Each data frame comprises a number of resource blocks, and each uplink channel is allotted an amount of resource blocks in each data frame.