A planar substrate device integrated with fin field effect transistors and a method of manufacture comprises a silicon-on-insulator wafer comprising a substrate; a buried insulator layer over the substrate; and a semiconductor layer over the buried insulator layer. The coil device has a flange on one side of the core with no flange being provided on the other side of the core. The housing includes at least one gasket coupled to the shell about an outer perimeter of the at least one opening. The abutment block is received in a recess in the caliper housing, and is securely fastened to the caliper housing by a fastener. The method uses a methodology that ensures certain requirements are met prior to satisfying the methodology.