A fin type field effect transistor includes a semiconductor substrate, an active fin, a first hard mask layer pattern, a gate insulation layer pattern, a first conductive layer pattern, and sourcedrain regions. The method comprises acts of detecting a plurality of candidate features in the voice signal, performing at least one comparison between one or more combinations of the plurality of candidate features and the voice signal, and selecting a set of features from the plurality of candidate features based, at least in part, on the at least one comparison. Computational efficiency permits many hundreds of queries to be serviced at the same time. A compensation circuit may compensate for aging drift in the resistance of the primary current sense resistor based on a comparison of the calibration resistor with the secondary current sense resistor. The front light unit comprises a light source section, a plate-shaped light guide body that guides light from the light source section to the liquid crystal panel, and a frame-shaped protection member mounted on a peripheral portion of the light guide body and engaged with the cell case, thus integrally holding the liquid crystal panel and the light guide body. The instructions are also configured to display a first color for each operation in the first list of operations indicative of a modification privilege related to the respective operation.