A method for fabricating a semiconductor device includes forming a copper film above a surface of a substrate, forming on a polishing pad a material which contains copper, wherein said copper does not derive from said copper film, and after having formed the copper-containing material on said polishing pad, polishing said copper film by use of said polishing pad. First, the wafer is held on a chuck table included in a cutting device in the condition where the additional layer is exposed, and a table base supporting the chuck table is moved toward a working position. A driving member opens and closes the louver blades by moving the levers, and in turn, the louver blades coupled there to.