A variable resistive element configured to reduce a forming voltage while reducing a variation in forming voltage among elements, a method for producing it, and a highly integrated nonvolatile semiconductor memory device provided with the variable resistive element are provided. The result is that both synchronizers are driven by the same clock signal, which arrives substantially simultaneously at the M1S1 clock ports of the synchronizers due to the fact that the synchronizers are side-by-side and their respective M1S1 clock lines are tied together. The method further allows implantation of a material with only one step and without an extra masking step. In addition, execution instrumentation is provided on the controlled system for receiving the representation and replicating the actions on the controlled system by interacting with a GUI of the controlled system. Relative rotation of the first and second members causes relative rotation of the inner and outer rings so that the rolling element rotates and compresses. The present method provides a processing mechanism based on hardware security unit in order to establish trusts between trusted computing systems.