A phase change memory device capable of fully discharging bit lines, even while occupying a relatively small area, and a fabricating method thereof are presented. Through the addition of a hydroxamated polymer at various stages of the process for production of these alumina trihydrate crystals, an upward shift in the particle size distribution of the alumina trihydrate crystals occurs. These techniques use dual apodization or weighting strategies that are effective in removing or minimizing clutter and efficient in terms of computational load and hardwaresoftware needs. By randomly selecting each state and its operations, the actions of many real users may be simulated, providing a realistic load test of the service. Also described is a method of making such a component.