A semiconductor device according to one embodiment includes an n-type first GaN-based semiconductor layer, a p-type second GaN-based semiconductor layer on the first GaN-based semiconductor layer. The rotor portion contains a plurality of lobes which interact with grooves in the casing portion, such that the interaction of the lobes and grooves create barriers which capture the volume. The plurality of electrodes are substantially parallel in a first direction and each of the plurality of electrodes includes a layer of light altering material. In another embodiment, the RF applicator may include an enclosure being electrically conductive and having a passageway therethrough to accommodate a flow of the hydrocarbon resource and a divider being electrically conductive and positioned within the enclosure.