A semiconductor device and a method for preparing the same that can solve crack of a semiconductor film, capacitance electrodes and the like due to stress when forming a source electrode and a drain electrode in a semiconductor device having a thin film transistor and a holding capacitance with three or more capacitance electrodes is provided. A stationary tubular insulator surrounds much of the movable center contact, and a stationary sheet metal shield lies around the tubular insulator and within the outer contact. The limiting element can be slidably received by the flexible member. Subtraction is then used to determine state metric difference information from the 1T equivalent metric values.