The present invention provides a SiC material, formed according to certain process regimes, useful as a barrier layer, etch stop, andor an ARC, in multiple levels, including the pre-metal dielectric level, in IC applications and provides a dielectric layer deposited in situ with the SiC material for the barrier layers, and etch stops, and ARCs. Each of the automatic service equipments obtains data of other user groups, data of other product groups and other, relation matrixes from other automatic service equipments. The micro-cores of the parser read the packet headers, and perform any suitably programmed tasks upon those packets and packet headers.