A memory device wherein a diode is serially connected to a programmable resistor and is in electrical communication with a buried digit line. A deployment opening may be formed through the skin layer with no pre-determined tear seam location. The input device is moved from the first position to one or more additional positions. The shelf is variable in terms of height, width andor length and can optionally be extended by adding modular elements. Furthermore, the invention concerns a corresponding method which is characterized in that, to alter the length of the articles to be cut off the rod, only one component is displaced, namely optionally the cutting device or the counter-support, and the other component is automatically displaced with it as a function of the displaced component. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors.