A semiconductor structure, particularly a pFET, which includes a dielectric material that has a dielectric constant of greater than that of SiO2 and a Ge or Si content of greater than 50% and at least one other means for thresholdflatband voltage tuning by material stack engineering is provided. Multi-targeting priming for genome-wide gene expression assays provides selective targeting of multiple sequences and counter-selection against undesirable sequences. The fluorohydrocarbon-containing polymer interacts with silicon nitride to form a volatile compound, thereby enabling etching of silicon nitride.