A memory cell includes a first electrode, a second electrode, and phase-change material between the first electrode and the second electrode. Furthermore, the information processing device has a circuit for performing the interleave control such that an interleave number on access to the unit memory connected to the memory channel can be constantly a multiplier of 2. Each data path that instantiates the schema join paths can be scored and evaluated as to the quality of the data with respect to specified integrity constraints to alleviate data quality problems. The method includes the steps of: providing at least one carbon nanotube wire and at least one supporting wire; twisting the carbon nanotube wire and the supporting wire together to form a multi-strand structure by a spinning process; and cutting the multi-strand structure according to a predetermined length to form a field emission element. A moving version of the highlighted graphical object may be drawn during a moving process, in which the moving version has an appearance distinct from the original object.