In a semiconductor device, a wiring pattern groove is formed in a surface portion of a silicon oxide film provided above a semiconductor substrate. The female housing has pin contacts in placed the cavity and partitions formed in it along the direction so as to separate the contacts one from another. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer.