A dicing tape is adhered to the lower surface of a silicon wafer that has pillar-shaped electrodes. Elastic gripping portions are arranged on the body so as to bulge radially inwardly. The left and right distal guide blocks each comprise a threaded passage, and the first threaded rod extends between the right proximal guide block and the right distal guide block, and the second threaded rod extends between the left proximal guide block and the left distal guide block. Also, the objective lens satisfies the following expressions to :0. The storage device also includes a charge trapping structure disposed on the second semiconducting layer and a conductive gate, wherein the conductive gate and the charge trapping structure move relative to the other, wherein an electric field applied across the second semiconducting layer and the conductive gate traps charge in the charge trapping structure.