Methods and apparatuses are described for integration of integrated circuit die and silicon-based trench capacitors using silicon-level connections to reduce connection lengths, parasitics and necessary capacitance magnitudes and volumes. This method and system comprises a number of steps, including characterizing the impact of various constituents in the crude which result in fouling of heat exchangers; estimating model parameters; monitoring and predicting qualitative and quantitative performance; and determining optimal dosage of chemical treatments. An ON-OFF period of the ON-OFF keying for the device is computed.