A mixed metal hydroxide with brucite structure is described, which contains nickel hydroxide as its main component and at least one trivalent metal selected from the group consisting of Co, Fe, Al, Ga, In, Sc, Y and La in an amount of from about 12 to about 30 atom % relative to the sum of the metal components including Ni. In one example, the method includes forming a PMOS transistor and an NMOS transistor, each of the transistors having a gate electrode and at least one sourcedrain region formed in a semiconducting substrate, forming a first sidewall spacer adjacent the gate electrodes and forming a second sidewall spacer adjacent the first sidewall spacer. The extended positions facilitate specimen scanning operation, and the retracted positions facilitate carrier box front side access during specimen non-scanning processing. The valve actuator can be reconfigured to provide mechanical holding for manually setting the orientation of the drive gear when a return spring load is provided in either a clockwise or counter-clockwise direction. The focus electrode is attached to, and supported by, the extraction electrodes via an insulating material with a distance being maintained between the focus and extraction electrodes.