A semiconductor device for a high voltage application includes a doped source base region, an N+ source region, a P+ source region and a gate structure. A first electrically conducting layer of copper may be positioned on the etch stop layer. The air flow blockage member is proximate the first space and is movable between at least a first open position and a second open position distinct from the first open position. The method displays a graphical user interface on a computer, and the graphical user interface indicates the assignment of the multiple tasks.