A method of reducing the specific contact resistivity of a metal to semiconductor interface between a metal contact and an InP semiconductor compound. The sound wave generator is disposed on a surface of the sound wave generator. The transparent structure has a plurality of lenslets on it. After removing the intermediate product from the cavity, the moil is severed from the end of the finish wall. The cooling system can include at least one pair of cooling channels. The devices of the present invention take advantage of combinations of pumping conduits and conducting conduits to permit the use of lower operating voltages in pumps, pressure multipliers, and flow controllers.