1459976974-956b953c-01c1-4ba9-8c1f-38967082201b

A system and method is disclosed for measuring a germanium concentration in a semiconductor wafer for manufacturing control of BiCMOS films. Preferred autoxidisable moieties are provided by derivatives of long chain fatty acids of the type used in alkyd paints and association is the preferred thickener mechanism. A retard-side side surface of an engaging hole is configured so as to be able to adjust a clearance between the second limiting pin and the retard-side side surface when the first limiting pin is engaged with a first advance end portion. Above the mounting position of the substrate, a thickness detecting sensor for monitoring the thickness of the resist film formed on the surface of the substrate is provided.