Fibre channel interface apparatus and methods are disclosed. The bulk semiconductor material includes a minority charge carrier diffusion length property configured to substantially match a predetermined hole diffusion length value and a thickness configured to substantially match a predetermined photodiode layer thickness. In the method, a solid-state red phosphorus and a porous conductive carbon material are provided. The impurity diffusion region is not arranged between the drain region and the element isolation film. The process step pairs may be ranked based on their calculated values, and redundant process step pairs may be eliminated. The calculating device converts the measuring result from the position-determining apparatus and the positional relationship device in order to give the instantaneous position andor orientation of the working part in the fixed coordinate system.