A method of fabricating complementary metal oxide semiconductor field effect transistors which includes selective doping and full silicidation of a polysilicon material comprising the gate electrode of the transistor. Within a transmission protocol frame, a time slot that can always accommodate the same number of bits independently of the data to be transmitted is assigned to each slave during a data transmission cycle. The pressure wave dislodges ash particulates from the filter, which can then be removed from the filter using an ash collecting apparatus, such as a shop vacuum. Each of the pad holes is aligned with a respective one of the lug holes, and at least one of the lug holes and the pad holes is a slotted hole for permitting angular adjustable positioning of the cable lug relative to the lug pad.