A P-type metal oxide semiconductor device can include an N-well that does not extend completely throughout the active region of the PMOS device. The driving device includes a group of thin film transistors with matrix array, a plurality of gate lines and a plurality of data lines. A drive assembly is positioned beneath the platform and includes a drive member moving on a constrained path. Additional insulation material may be provided between the dimple and the contact pad to prevent the dimple from penetrating through the flexible circuit’s cover layer and shorting the driving voltage. The raised protrusion and the recess are shaped such that the raised protrusion is frictionally engaged by the end walls of the recess. The rate of data being mapped into outgoing tributaries is regulated, and the outgoing mapped tributaries are combined in a SPE.