The invention uses an adhesion layer of an amorphous alloy of aluminum. The memory device provides multiple modes of operation including a DRAM mode using the capacitor and a non-volatile random access memory mode using the NROM transistor. Then, the resist pattern is removed using a stripping solution or oxygen plasma ashing. The preferred method of processing a workpiece is to deposit or adsorb a thin layer in the first compartment and then transfer by rotating the workpiece on the workpiece mover to the second compartment for further processing. By means of the filter, a wide stop band is obtained, while the passband or passbands can comprise a plurality of radio bands. An eDRAM structure is connected electronically with a channel region of the transistor device, the eDRAM structure extending from the channel region of the transistor device to a sub-surface below a top surface of the semiconductor substrate.