A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure which supports capacitor bottom plates during wafer processing. Integrated circuit transistors may be turned off using a reverse bias voltage rather than a ground voltage. An airflow across one or more electronic components is disrupted by the geometry of the different pin angles of the tandem heat sink, thereby creating turbulence which increases the efficiency of the heat sink and prevents thermal shading from occurring. Thereby, a high sensitivity wireless receiver can be realized.