A semiconductor device comprising curable polyorganosiloxane composites is provided where the composites contain at least 0. This method stabilizes formation of the zinc oxide thin film and improves adhesion between the thin film and the substrate. A single pin assembly having a third pin is disposed for rotating the bundles in a set rotational direction. At low flow the orifice does not cause any appreciable pressure drop. The film formation source material is an organic metal compound containing a metal of the metal oxide film and prepared by mixing a first organic metal compound that is solid at room temperature and has a higher vapor pressure with a second organic metal compound that is liquid at room temperature such that the organic metal compound is liquid at room temperature. As the trigger is depressed, the first and second arms of the cursor move along the resistance element to vary a resistance in the circuit formed between the first and second wires.